▎ 摘　　要

Direct growth of large area uniform high quality graphene films on dielectric or semiconductor substrate is very important for graphene application in electronic devices. In this paper, a simple method is introduced to directly grow uniform and large area bi-layer graphene films on silicon substrates by chemical vapor deposition. Raman spectroscopy, x-ray photoelectron spectroscopy, atomic force microscopy and electrical transport measurements are employed to characterize and evaluate the quality of the as-synthesized graphene films. Raman mapping indicates that the graphene film on silicon substrate is large area uniformity. The graphene-based electronic device is fabricated and the measured mobility of the directly grown graphene film is 343.3 cm(2)/(V.S). These as-synthesized graphene films may have potential applications in conducted films, electronic devices, etc.