• 文献标题:   Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor
  • 文献类型:   Article
  • 作  者:   SONG HD, ZHU PF, FANG JZ, ZHOU ZQ, YANG H, WANG KY, LI JB, YU DP, WEI ZM, LIAO ZM
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:  
  • 被引频次:   5
  • DOI:   10.1103/PhysRevB.103.125304
  • 出版年:   2021

▎ 摘  要

Graphene is favorable to realize topological nontrivial state by introducing spin-orbit coupling and exchange field through the proximity effect. The recent discovery of van der Waals magnets allows great proximitized modulation on graphene by building atomically clean heterostructures. Here, we realize anomalous Hall effect in graphene coupling with a layered magnetic material, FexSn1-xS2. The anomalous Hall resistance and the carrier density show a nonmonotonous dependence on the back-gate voltage, indicating emergence of band-structure transformation. Furthermore, low-field quantum interference measurement shows the enhancement of spin-orbit coupling (SOC) in the heterostructure. Our findings confirm that graphene coupling to FexSn1-xS2 is an ideal platform that is likely to introduce a strong exchange field and SOC simultaneously, which has outstanding potential in realizing topological nontrivial states and spintronics.