• 文献标题:   Bandgap and pseudohelicity effects over conductance in gapped graphene junctures
  • 文献类型:   Article
  • 作  者:   NAVARROGIRALDO JA, QUIMBAY CJ
  • 作者关键词:   graphene, dirac fermion, graphene junction
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Univ Nacl Colombia
  • 被引频次:   0
  • DOI:   10.1088/1361-648X/aac61f
  • 出版年:   2018

▎ 摘  要

We study the conductance in gapped single-layer graphene junctures as a function of bangap, pseudohelicity and charge carriers density. To do it, we first calculate the transmission coefficients of massive charge carries for p-n and n-p-n junctures of gapped single-layer graphene. Next, we calculate the conductance for these two systems using the Landauer formula. Only for the p-n juncture case and non-zero bandgap values, we find the existence of a contribution to the conductance from pseudohelicity inversion states, which is small compared to the contribution from pseudohelicity conservation states. Also, we find for both type of junctures that there exists a window of charge carriers densities values where the conductance is zero (conductance gap), in such a way that the size of this window depends on the squared of the bandgap. We observe that the existence of a bandgap in the system leads to valley mixing and this fact could be useful for the future design of devices based on single- layer graphene.