▎ 摘　　要

On-chip electrostatic discharge (ESD) protection is becoming more challenging for integrated circuits (ICs) made in advanced technology nodes. The ESD-induced design overhead, including ESD parasitic effects and layout area, inherent to the traditional in-Silicon PN-junction-based ESD protection devices, rapidly becomes unbearable to high-performance and complex ICs. A disruptive above-Si mechanical ESD switch device, made in CMOS backend using a graphene nano-electromechanical-system (gNEMS) structure, was recently devised and demonstrated using poly-crystalline graphene films. This paper reports design, fabrication and comprehensive characterization of single-crystalline gNEMS ESD switch devices. Measurement using transmission line pulse (TLP) and very fast transmission line pulse (VFTLP) ESD testing reveals superior ESD protection capability of gNEMS devices made in single-crystalline graphene over its poly-crystalline counterparts, achieving a record-high ESD current handling capability of I-t2 similar to 1.19 x 10(10) A/cm(2) under TLP zapping and I-t2 similar to 6.09 x 10(9) A/cm(2) under VFTLP stressing. The ESD robustness enhancement related to single-crystalline graphene material property is discussed.