▎ 摘　　要

The performance of graphene field effect transistors (GFETs) strongly depends on the interface between graphene sheets and the underlying substrates. In this work, we report that an octadecyltrimethoxysilane (OTMS) SAM modified conventional SiO2/Si substrate can consistently enhance the performance of coronene-derived large area graphene FETs. The improved transport properties in terms of boosted carrier mobility (up to 10 700 +/- 300 cm(2)V(-1) s(-1)), long mean free path, nearly vanished hysteretic behavior, and remarkably low intrinsic doping level are mainly attributed to the strong suppression of interfacial charge impurity scattering and remote interfacial phonon (RIP) scattering, less adsorption of dipolar adsorbates, and the attenuated charger transfer at the interface of graphene and dielectric. The intrinsic doping levels (the Fermi energy) of graphene on OTMS-modified and bare SiO2 have been quantitatively estimated and confirmed by the Dirac points of GFETs, the Raman mapping of G-peak positions, and the surface potential maps by KPFM. The facile fabrication of a graphene device over a large area provides an unprecedented combination of high performance and low cost for the future application of all carbon-based nanoelectronics.