▎ 摘　　要

N-doped graphene oxide (NGO) thin film was synthesised by photochemical reduction method in an ammonia atmosphere. The NGO film obtained has high N content of 9.77 at.%. The photocurrent amplitude for the NGO film is ca. 8.29 mu A at 5 mV. The NGO film exhibits significant photocurrent enhancement with a high-enhancement ratio of similar to 1200% at 0.5 mV and enhancement ratio for NGO film is nearly twice of that for the reduced graphene oxide (RGO) film at all different bias voltage, which may attribute to the high content of N.