▎ 摘　　要

The identification of the precise structure of the defects is a prerequisite for studying the physicochemical properties of different types of defects and achieving of graphene properties. Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) were combined to study the precise structure of graphene defects formed during the growth process on Ir(111) surface and artificially induced by ion sputtering, including single vacancies, nonhexagonal topological structures, as well as the defects under graphene layer.