▎ 摘　　要

Electronic performance of armchair graphene nanoribbon (AGNR) resonant tunneling diodes (RTDs) is influenced by strain effects, when they are mounted on the stretchable substrates or mechanically deformed due to real working conditions. Therefore, it is important to investigate how uniaxial strain can impact the performance of AGNR RTDs. In this paper, two platforms of AGNR RTD namely width-modified AGNR RTD and field-modified AGNR RTD are introduced and they are under both compressive and tensile uniaxial strain. It is found that the characteristics of AGNR RTD change considerably under either compressive or tensile strain. In particular, peak to valley ratio (PVR) can be totally deteriorated upon strong enough whole-body strain. However, local strain in the channel and barrier regions, in contrast to whole-body strain, can even improve the efficiency of AGNR RTD devices. Furthermore, the behavior of strained AGNR RTD is investigated while the width of device is modified. Numerical tight binding coupled with non-equilibrium Green's function is derived for this study to calculate corresponding Hamiltonian matrices and transport properties.