• 文献标题:   Bound state energy of a Coulomb impurity in gapped bilayer graphene
  • 文献类型:   Article
  • 作  者:   SKINNER B, SHKLOVSKII BI, VOLOSHIN MB
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Univ Minnesota
  • 被引频次:   13
  • DOI:   10.1103/PhysRevB.89.041405
  • 出版年:   2014

▎ 摘  要

Application of a perpendicular electric field induces a band gap in bilayer graphene, and it also creates a "Mexican hat" structure in the dispersion relation. This structure has unusual implications for the hydrogen-like bound state of an electron to a Coulomb impurity. We calculate the ground state energy of this hydrogen-like state as a function of the applied interlayer voltage and the effective fine structure constant. Unlike in the conventional hydrogen atom, the resulting wave function has many nodes even in the ground state. Further, the electron state undergoes "atomic collapse" into the Dirac continuum both at small and large voltage.