▎ 摘　　要

A technologically simple approach to the synthesis of lateral graphene-based heterostructures with thin potential barriers was implemented. Thin potential barriers emerged at the boundaries of domains of the original graphene at the initial stage of its chemical modification. Fluorination and hydrogenation of graphene and its interaction with intercalated organic molecules were used to form the barriers. The channels of transistors fabricated from such heterostructures exhibited efficient current control (four to five orders of magnitude) under a varying gate voltage. This approach opens up new possibilities for the fabrication of device structures in electronics and optoelectronics.