▎ 摘　　要

- In this paper, we prepare and test a graphene field-effect transistor with two top gates. The Fermi energy level of graphene can be adjusted by applying positive and negative voltages to the two top gates, and N-type and P-type graphene are formed in the channel re-gion, thus inducing a graphene p-n junction. The current model is established using the gradual channel approxi-mation (GCA) method, and the current and p-n junction characteristics of the device were obtained by formula simulations. Based on the principle of p-n junction lumi-nescence, this device with graphene p-n junction is ex-pected to achieve terahertz wave radiation with an ap-propriate optical resonant cavity.