▎ 摘　　要

To fabricate a BN-sandwiched multilayer graphene field-effect transistor, we developed a self-aligned contact scheme in combination with optimized stamping processes for the stacking of two-dimensional (2D) materials. By using a self-aligned contact method during device fabrication, we can skip the dry-etch process which requires an exact etch-stop at the surface of the graphene layer and is not easy to control. In the structure of a dual-gate transistor, successful device operation at low temperature with and without magnetic fields proves that the self-alignment contact can be an effective tool for reliable device fabrication using 2D materials. (C) 2015 Elsevier B.V. All rights reserved.