• 文献标题:   Planar graphene Josephson coupling via van der Waals superconducting contacts
  • 文献类型:   Article
  • 作  者:   LEE J, KIM M, WATANABE K, TANIGUCHI T, LEE GH, LEE HJ
  • 作者关键词:   graphene, proximity josephson junction, nbse2, van der waals stacking, dry transfer
  • 出版物名称:   CURRENT APPLIED PHYSICS
  • ISSN:   1567-1739 EI 1878-1675
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   2
  • DOI:   10.1016/j.cap.2018.06.016
  • 出版年:   2019

▎ 摘  要

We report on the fabrication and transport characteristics of van der Waals (vdW)-contacted planar Josephson junctions. In a device, two pieces of cleaved 2H-NbSe2 superconducting flakes and a monolayer graphene sheet serve as the superconducting electrodes and the normal-conducting spacer, respectively. A stack of NbSe2 - graphene-hexagonal-boron-nitride (hBN) heterostructure with clean and flat interfaces was prepared by a dry transfer technique. The outermost hBN layer protected the NbSe2 - graphene - NbSe2 Josephson junction from chemical contamination during the fabrication processes. The Josephson coupling was confirmed by a periodic modulation of the junction critical current I in a perpendicular magnetic field. The temperature dependence of I showed long and diffusive Josephson coupling characteristics. The temperature dependence of the superconducting gap, obtained from the multiple Andreev reflection features, followed the Bardeen - Cooper - Schrieffer (BCS) prediction.