▎ 摘　　要

Graphene has been attracting wide interests owing to its excellent electronic, thermal, and mechanical performances. Despite the availability of several production techniques, it is still a great challenge to achieve wafer-size graphene with acceptable uniformity and low cost, which would determine the future of graphene electronics. Here we report a universal segregation growth technique for batch production of high-quality wafer-scale graphene from non-noble metal Films. Without any extraneous carbon sources, 4 in. graphene wafers have been obtained From Ni, Co, Cu-Ni alloy, and so forth via thermal annealing with over 82% being 1-3 layers and excellent reproducibility. We demonstrate the First example of monolayer and bilayer graphene wafers using Cu-Ni alloy by combining the distinct segregation behaviors of Cu and Ni. Together with the easy detachment from growth substrates, we believe this facile segregation technique will offer a great driving force For graphene research.