▎ 摘　　要

We report the first experimental demonstration of a lateral graphene heterostructure field-effect transistor (HFET) at wafer scale, where the graphene heterostructure channel consists of epitaxial graphene (Gr)/fluorographene (GrF)/graphene (Gr). GrF is a widebandgap material, providing a potential barrier to lateral carrier transport. Gate bias modulation of the Gr/GrF/Gr barrier via an electric field effect results in normally-off enhancement-mode graphene HFETs with an ON-OFF switching ratio of 10(5) at room temperature. These devices also demonstrate excellent current-voltage saturation, providing a potential path for active RF applications.