• 文献标题:   Hydrogen adsorption and anomalous electronic properties of nitrogen-doped graphene
  • 文献类型:   Article
  • 作  者:   FUJIMOTO Y, SAITO S
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   33
  • DOI:   10.1063/1.4871465
  • 出版年:   2014

▎ 摘  要

We investigate hydrogen adsorption effects on stabilities and electronic properties of nitrogen defects in graphene using first-principles electronic-structure calculations within the density-functional theory. We find that the adsorption of hydrogen atoms on the pyridine-type nitrogen defects in graphene becomes energetically favorable, whereas in the case of the substitutional nitrogen defect the hydrogen adsorption becomes unfavorable. We also find that a transition from p-type to n-type doping properties occurs by hydrogen adsorption on the pyridine-type defects, suggesting that even the carrier type is controllable in nitrogen-doped graphene. (C) 2014 AIP Publishing LLC.