• 文献标题:   Imaging and Tuning Molecular Levels at the Surface of a Gated Graphene Device
  • 文献类型:   Article
  • 作  者:   RISS A, WICKENBURG S, TAN LZ, TSAI HZ, KIM Y, LU J, BRADLEY AJ, UGEDA MM, MEAKER KL, WATANABE K, TANIGUCHI T, ZETTL A, FISCHER FR, LOUIE SG, CROMMIE MF
  • 作者关键词:   graphene, organic molecule, vibronic level, scanning tunneling microscopy, scanning tunneling spectroscopy, density functional theory, gw selfenergy
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Vienna Univ Technol
  • 被引频次:   23
  • DOI:   10.1021/nn501459v
  • 出版年:   2014

▎ 摘  要

Gate-controlled tuning of the charge carrier density in graphene devices provides new opportunities to control the behavior of molecular adsorbates. We have used scanning tunneling microscopy (STM) and spectroscopy (STS) to show how the vibronic electronic levels of 1,3,5-tris(2,2-dicyanovinyl)benzene molecules adsorbed onto a graphene/BN/SiO2 device can be tuned via application of a backgate voltage. The molecules are observed to electronically decouple from the graphene layer, giving rise to well-resolved vibronic states in dI/dV spectroscopy at the single-molecule level. Density functional theory (DFT) and many-body spectral function calculations show that these states arise from molecular orbitals coupled strongly to carbon-hydrogen rocking modes. Application of a back-gate voltage allows switching between different electronic states of the molecules for fixed sample bias.