• 文献标题:   Plasma Treatment to Improve Chemical Vapor Deposition-Grown Graphene to Metal Electrode Contact
  • 文献类型:   Article
  • 作  者:   KWON T, AN H, SEO YS, JUNG JW
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Sejong Univ
  • 被引频次:   10
  • DOI:   10.1143/JJAP.51.04DN04
  • 出版年:   2012

▎ 摘  要

We show that contact properties of chemical vapor deposition (CVD)-grown graphene to metal electrode can be improved with Ar plasma treatment before metal electrode deposition. The Ar plasma treatment reduced the baseline signal of the Raman spectrum of graphene without changing main peaks of 2D and G peak and increasing D peak, supporting its effectiveness to reduce the polymer residue. Transfer length method (TLM) patterns for the plasma-treated samples exhibit more linear and neat current-voltage curve, and lower contact resistance compared with the control one (no plasma treated sample). These results support that plasma treatment is effective to improve the graphene-metal contact properties by reducing interface polymer residue. (C) 2012 The Japan Society of Applied Physics