• 文献标题:   Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets
  • 文献类型:   Article
  • 作  者:   KWIECINSKI W, SOTTHEWES K, POELSEMA B, ZANDVLIET HJW, BAMPOULIS P
  • 作者关键词:   mos2 graphene, 2d material, chemical vapor deposition, heterostructure
  • 出版物名称:   JOURNAL OF COLLOID INTERFACE SCIENCE
  • ISSN:   0021-9797 EI 1095-7103
  • 通讯作者地址:   Univ Twente
  • 被引频次:   4
  • DOI:   10.1016/j.jcis.2017.06.076
  • 出版年:   2017

▎ 摘  要

Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 degrees C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms intercalate at this high temperature, and during the deposition process, through defects of the molybdenum disulfide surface such as steps and wrinkles. Post growth atomic force microscopy images reveal that circular flat graphene islands have grown at a high yield. They consist of two graphene layers stacked on top of each other with a total thickness of 0.74 nm. Our results demonstrate direct, simple and high yield growth of graphene/molybdenum disulfide heterostructures, which can be of high importance in future nanoelectronic and optoelectronic applications. (C) 2017 Elsevier Inc. All rights reserved.