• 文献标题:   Electronic properties and strain sensitivity of CVD-grown graphene with acetylene
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   YANG M, SASAKI S, OHNISHI M, SUZUKI K, MIURA H
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Tohoku Univ
  • 被引频次:   6
  • DOI:   10.7567/JJAP.55.04EP05
  • 出版年:   2016

▎ 摘  要

Although many studies have shown that large-area monolayer graphene can be formed by chemical vapor deposition (CVD) using methane gas, the growth of monolayer graphene using highly reactive acetylene gas remains a big challenge. In this study, we synthesized a uniform monolayer graphene film by low-pressure CVD (LPCVD) with acetylene gas. On the base of Raman spectroscopy measurements, it was found that up to 95% of the as-grown graphene is monolayer. The electronic properties and strain sensitivity of the LPCVD-grown graphene with acetylene were also evaluated by testing the fabricated field-effect transistors (FETs) and strain sensors. The derived carrier mobility and gauge factor are 862-1150 cm(2)/(V.s) and 3.4, respectively, revealing the potential for high-speed FETs and strain sensor applications. We also investigated the relationship between the electronic properties and the graphene domain size. (C) 2016 The Japan Society of Applied Physics