▎ 摘　　要

In this paper, a new ultrascaled junctionless graphene nanoribbon tunnel field-effect transistor (JL GNRTFET) is proposed through a computational study. The quantum simulation approach is based on the resolution of the Schrodinger equation using the mode space non-equilibrium Green's function formalism coupled self-consistently with a Poisson equation in the ballistic limit. The proposed nanodevice is endowed with ungated region between the auxiliary and control gates as well as with a laterally graded channel doping in order to improve the switching performance of the ultrascaled junctionless GNRTFET. The performance assessment has included the I-DS-V-GS transfer characteristics, subthreshold swing, current ratio, intrinsic delay, and power-delay product. It has been found that the proposed ultrascaled junctionless GNR tunneling FET can provide improved switching performance than its conventional counterpart. The proposed strategy can be applied to improve similar ultrascaled junctionless tunneling field-effect transistors for the future digital electronics, where the high-performance and the aggressive downscaling should be in agreement.