• 文献标题:   Reentrant Kondo effect in Landau-quantized graphene: Influence of the chemical potential
  • 文献类型:   Article
  • 作  者:   DORA B, THALMEIER P
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Max Planck Inst Phys Komplexer Syst
  • 被引频次:   20
  • DOI:   10.1103/PhysRevB.76.115435
  • 出版年:   2007

▎ 摘  要

We have studied the effect of an Anderson impurity in Landau quantized graphene, with special emphasis on the influence of the chemical potential. Within the slave-boson mean-field theory, we found reentrant Kondo behavior by varying the chemical potential or gate voltage. Between Landau levels, the density of states is suppressed, and by changing the graphene's Fermi energy, we cross from metallic to semiconducting regions. Hence, the corresponding Kondo behavior is also influenced. The f-level spectral function reveals both the presence of Landau levels in the conduction band and the Kondo resonance.