• 文献标题:   Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons
  • 文献类型:   Article
  • 作  者:   MARCONCINI P, CRESTI A, ROCHE S
  • 作者关键词:   graphene ribbon, transistor, boron doping, channel length, transport, ion/ioff ratio, mobility gap
  • 出版物名称:   MATERIALS
  • ISSN:   1996-1944
  • 通讯作者地址:   Univ Pisa
  • 被引频次:   1
  • DOI:   10.3390/ma11050667
  • 出版年:   2018

▎ 摘  要

Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I-ON/I-OFF ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the I-ON/I-OFF ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.