• 文献标题:   Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking
  • 文献类型:   Article
  • 作  者:   WIERZBOWSKA M, DOMINIAK A, PIZZI G
  • 作者关键词:   graphene, sic substrate, thermoelectric, aa ab abc stacking, wannier function, boltzmann code, dft
  • 出版物名称:   2D MATERIALS
  • ISSN:   2053-1583
  • 通讯作者地址:   Univ Warsaw
  • 被引频次:   6
  • DOI:   10.1088/2053-1583/1/3/035002
  • 出版年:   2014

▎ 摘  要

The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare various graphene stackings (AA, AB and ABC) both free-standing and deposited on the 4H-SiC(0001) C-terminated substrate. We find that the presence of the SiC substrate can significantly affect the thermopower properties of graphene layers, depending on the stacking, providing a promising way to tailor efficient graphene-based devices.