▎ 摘　　要

Reduced graphene oxide nano-bridges and tunable electrical transport properties of reduced graphene oxide based transistors are achieved by using tip-based nanolithography. The polarity dependence of the reduction is revealed with a threshold reduction bias of -6 V on the nano-scale tip. The best carrier mobilities up to now for holes and for electrons in reduced-graphene-oxide-based nano-scale transistors are about 5.6 cm(2) V-1 s(-1) and 3.2 cm(2) V-1 s(-1) at room temperature. Moreover, the tunable output and transport properties have been realized for the first time by the controlled nano-tip electrochemical reaction with different reduction nano-tip biases. These tunable electrical properties of graphene based transistors will be extended to develop various novel optoelectronic and microelectronic applications. It opens a possible way to mass production of a graphene oxide based device, representing a significant step forward for electrical applications.