▎ 摘　　要

We study transport properties of massive Dirac electrons tunneling through a strained barrier in graphene junction. The interplay of strained barrier and gap opening in graphene is focused. As an interesting result, we find that the applied strain in the barrier would cause a maximum conductance for some strain values leading to "strain filtering effect". Perfect strain filter is predicted at the Fermi level approaching the energy gap. The selected strain value is found to be tunable by the gate voltage at the barrier. The strain filtering effect does not occur when graphene is gapless. The gate-controlled strain filter is almost linearly dependent on gate voltage for large strain. Our work reveals the potential of graphene for application of strain sensor or filter device. (C) 2015 Elsevier Ltd. All rights reserved.