▎ 摘　　要

Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 degrees C is a technical obstacle. In this work, we report on graphene synthesis on 6H-SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C-1 and C-6-cluster ions implanted into 6H-SiC substrates, some of the Si-C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 degrees C. (C) 2015 Elsevier B.V. All rights reserved.