▎ 摘　　要

Based on the Tight-Binding model, we have asymmetric massless Dirac fermions as the carriers in graphene under tension. Because of uniaxial strain, the velocities of Dirac fermions depend on their directions. This work studies the effect of the uniaxial strain on the spin transport through a single magnetic barrier of the strained graphene system. The result shows that graphene has a great potential for applications in nano-mechanical spintronic devices. This is because of strain in graphene can induce the spin-dependent pseudo-potentials at the barrier to control the spin currents of the junction. (C) 2010 Elsevier B.V. All rights reserved.