• 文献标题:   Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers
  • 文献类型:   Article
  • 作  者:   BALU R, ZHONG XL, PANDEY R, KARNA SP
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   USA
  • 被引频次:   69
  • DOI:   10.1063/1.3679174
  • 出版年:   2012

▎ 摘  要

Effect of electric field on the band structures of graphene/boron nitride (BN) and BN/BN bilayers is investigated within the framework of density functional theory. The calculated bandgap of the graphene/BN bilayer increases, although by small amount, with applied electric field. In the case of BN/BN bilayer, the bandgap decreases with the applied field in agreement with earlier studies. The modulation of bandgap in graphene/BN bilayers is dominated by the features of graphene and appears to be related to the modification in molecular orbitals as revealed by the calculated projected density of states. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679174]