▎ 摘　　要

Graphene is a relatively new material. The current state-of-the-art of the graphene synthesis has been reviewed. Existing mechanism for the graphene synthesis has been examined. The flaws of this mechanism have been described. Attempts have been made to present a new mechanism called the vapor-quasiliquid (quasisolid)-solid mechanism. For this, various physicochemical processes contributing to graphene synthesis have been considered. These processes include the substrate surface morphology, substrate surface energy, carbon solubility in the substrate surface, temperature, and pressure. Surface disturbance and surface amorphicity of the substrate, together with Knudsen diffusion of the carbon species through this surface, are the key elements of the proposed mechanism. This mechanism appears to have a common platform and a number of ground rules. It describes, for the first time, essentially all possible graphene syntheses, including the synthesis of single-layer, bilayer, few-layer, and multilayer graphene films on all possible substrates, such as metal foils, evaporated metal films, semiconductors, ceramics, and dielectrics. It addresses important features of graphene synthesis as well, namely, the role of permeability, substrate surface orientation, edge effects, etc. The results based on the proposed mechanism are in good agreements with the available experiments. Published by AIP Publishing.