▎ 摘　　要

The magnetoresistance in weak magnetic fields is calculated in graphene containing "short-range" scatterers causing isotropic intra- and inter-valley scattering and "long-range" scatterers characterized by absence of backscattering within a self-consistent Born approximation. When "short-range" scatterers are dominant, the magnetoresistance is negative and has a double-dip structure in the vicinity of zero energy, qualitatively in agreement with the results obtained in a constant broadening approximation, where energy independent broadening is introduced and vertex corrections are neglected. With the increase in the strength of "long-range" scatterers, the magnetoresistance becomes positive and has a double-peak structure in agreement with previous results obtained for scatterers with a Gaussian potential and realistic charged impurities.