▎ 摘　　要

We report variable range hopping (VRH) transport in monolayer epitaxial graphene grown on SiC. A crossover from Efros-Shklovskii (E-S) VRH to Mott VRH can be observed by increasing the magnetic field applied perpendicular to the plane of graphene or by a low-temperature vacuum annealing process. Our new experimental results suggest that monolayer graphene on SiC is an interesting platform for probing VRH and crossover between different VRH regimes in a strongly disordered system. (C) 2017 The Physical Society of the Republic of China (Taiwan). Published by Elsevier B.V. All rights reserved.