▎ 摘　　要

Two-dimensional graphene oxide (GO) was coated on one-dimensional silicon nanowires (SiNWs) to form a GO/SiNWs heterojunction. SiNWs can be replaced with Si because SiNWs have better optical and electronic properties than bulk Si. The coating of crumpled and wrinkled sheets of GO on SiNWs was observed from FESEM images. The coating of GO also led to a decrease in the reflectance of light by SiNWs. The GO/SiNWs heterojunction improved the current-voltage characteristics compared to bare SiNWs. GO/SiNWs heterojunction showed an ideality factor of 1.42 and barrier height of 0.38 eV. A low value of leakage current (5.16 x 10(-4) mA) was obtained for GO/SiNWs compared to bare SiNWs (1.63 x 10(-3) mA).