▎ 摘　　要

Perovskites have attracted enormous attention in optoelectronics, owing to their excellent optoelectronic properties, low-cost constituents, and simple solution fabrication approaches. Despite significant advances in large-scale production of perovskite films, electrode layers-indispensable components of an optoelectronic device-are typically fabricated by depositing noble metals onto perovskite films using complicated techniques, which hinder the large-scale production of optoelectronic devices. Herein, a whole-device mass-producible perovskite photodetector is developed using low-cost and high-scalability direct laser writing (DLW) of laser-induced graphene on a flexible polyimide (PI) film as electrodes, followed by depositing a formamidinium cesium lead triiodide perovskite film using solution methods as the sensing element. The fabricated device exhibits a broad bandwidth (from 365 to 940 nm), a decent responsivity (15.1 mA W-1) and detectivity (5.12 x 10(13) Jones), a large photo-to-dark current ratio (47.2), and short response time (rise time = 0.4 s and decay time = 0.4 s). The device demonstrates a high humidity (relative humidity = 85%) stability, a long-term (>48 days) stability, and a high flexibility (0 degrees/90 degrees bending cycles > 1000 times) after encapsulation. The developed whole-device scalable fabrication sheds light on the mass production and commercialization of perovskite based optoelectronic devices and flexible electronics.