▎ 摘　　要

This study investigated the interaction between square top-hat laser beams and PEDOT: PSS [poly(3,4-ethylene dioxythiophene): poly(4-styrene sulfonate)]/graphene thin films by using ultraviolet (UV) laser-beam-shaping technology for electrode patterning. This novel laser process can reduce the number of fabrication steps and quantity of chemical solutions and can improve the removal efficiency of graphene films. The laser processing parameters were the laser pulse energy, pulse repetition frequency, and feeding rate of a motorized XY-axis positioning table for ablating the graphene thin films. The square top-hat laser beam was irradiated along line patterns with the applied laser fluences markedly over the ablation thresholds of 1.41 to 2.5 J/cm(2). Increasing the laser fluence from 1.41 to 2.5 J/cm(2) increased the ablated line widths and depths from 35.61 +/- 0.28 to 43.23 +/- 0.21 mu m and from 224 +/- 10 to 279 +/- 9.29 nm, respectively. The ablated lines of the microstructured electrodes had a clear, smooth, and regular ablated edge quality. Moreover, a maskless laser direct writing process yielded patterned film structures that provide electrical isolation and prevent electrical contact from each region.