▎ 摘　　要

The combination of two-dimensional (2D) material has been studied by many research groups to develop an important component of the device. Graphene is a well-known 2D material which does not have a bandgap. After the intensive study, other 2D materials have been also focused by many researchers. One of the materials is Molybdenum disulfide (MoS2) which is currently the most promising 2D semiconductor material. In this paper, we synthesize hybrid layer which consists of graphene and MoS2 to fabricate a diode and report the synthesis method of the hybrid film and the electrical properties of the device. Graphene is synthesized by chemical vapor deposition (CVD) method and transfer to a target substrate (Si/SiO2). And then MoS2 is directly deposited on the graphene layer using Mo(CO) 6 and H2S gases. The fabricated device shows pn diode property because graphene and MoS2 have p-type and n-type properties, respectively. The threshold voltage of the device is about 2.5 V and the slope of the I-V curve is decreased by increasing the distance between electrode. Each electrode has the same distance (0.5 mm).