▎ 摘　　要

We investigate the transport properties of the van der Waals (vdW) junction between a layered superconductor NbSe2 and a graphene. A superconductor/graphene (S/G) vdW junction is fabricated by dry transferring a freshly exfoliated NbSe2 flake onto a graphene surface. This vdW junction provides a transparent superconductor/graphene contact as well as metal-induced doping in the graphene layer underneath, thereby facilitating vdW coupling-induced superconductivity in the graphene under the NbSe2 layer. The NbSe2/superconducting graphene (Sc-graphene)/graphene structure causes the differential resistance of the vdW junction to exhibit zero-bias dip and multiple peaks at larger bias. All of these features are explained by the coexistence of two different S/G interfaces in the device; these are lateral Sc-graphene/graphene and vertical NbSe2/Sc-graphene. A proximity-induced superconducting gap Delta(i) in the Sc-graphene is detected by Andreev reflection at the lateral Sc-graphene/graphene junction and the determined Delta(i) = 0.05 - 0.06 meV.