• 文献标题:   Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   YANG H, SHEN CM, TIAN Y, WANG GQ, LIN SX, ZHANG Y, GU CZ, LI JJ, GAO HJ
  • 作者关键词:   graphene, chemical vapor deposition, raman spectra
  • 出版物名称:   CHINESE PHYSICS B
  • ISSN:   1674-1056 EI 1741-4199
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   9
  • DOI:   10.1088/1674-1056/23/9/096803
  • 出版年:   2014

▎ 摘  要

Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH4 for 30 minutes.