▎ 摘　　要

In this study the organic resistive switching devices having sandwich structure of indium tin oxide (ITO)-coated glass/poly(4-vinylphenol) (PVP)-graphene composite/silver (Ag) were fabricated and characterized. The active layers were fabricated using blended, semiblend and layer-by-layer approaches, sandwiched between two electrodes. The film thicknesses of the active layers were measured to be about 200 nm. The surface morphology was characterized by field-emission scanning electron microscopy. Electrical current-voltage (I-V) analyses confirmed the memristive behavior of the sandwich devices. The effect of active layer fabrication approach was analyzed by comparing the resistive switching characteristics. The devices showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between +/- 2V, characterized at 100 mu A and 5mA compliance currents. The memristive behavior of PVP-graphene active layer fabricated by blended approach showed more stability and robustness compared to non-blended approaches. The devices fabricated by blended approach exhibited a room temperature V-I hysteresis and R-OFF/R-ON approximate to 5. (C) 2015 The Japan Society of Applied Physics