• 文献标题:   Demonstrating the concepts of sheet resistance, field effect, and mobility of a semiconductor using graphene field effect transistors
  • 文献类型:   Article
  • 作  者:   STECHER K, HUANG SHY, ESCORCIO R, LUICANMAYER A
  • 作者关键词:   sheet resistance, mobility, field effect, semiconductor physics laboratory, graphene
  • 出版物名称:   EUROPEAN JOURNAL OF PHYSICS
  • ISSN:   0143-0807 EI 1361-6404
  • 通讯作者地址:   Univ Ottawa
  • 被引频次:   0
  • DOI:   10.1088/1361-6404/ab4444
  • 出版年:   2019

▎ 摘  要

With rapid advancement in the discovery of innovative materials, there is great opportunity for enhancing undergraduate laboratories teaching basic physics. Here, we exemplify a laboratory focused on basic concepts of semiconductors (sheet resistance, field effect, mobility) taking advantage of commercially available graphene devices, a cutting-edge material system. We present an experimental set-up and protocol that can be used to implement such a laboratory lecture. We introduce the physics concepts that will be explored and we discuss the results obtained when we carried out the described laboratory experiment.