• 文献标题:   A General Route Towards Defect and Pore Engineering in Graphene
  • 文献类型:   Article
  • 作  者:   XIE GB, YANG R, CHEN P, ZHANG J, TIAN XZ, WU S, ZHAO J, CHENG M, YANG W, WANG DM, HE CL, BAI XD, SHI DX, ZHANG GY
  • 作者关键词:  
  • 出版物名称:   SMALL
  • ISSN:   1613-6810 EI 1613-6829
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   25
  • DOI:   10.1002/smll.201303671
  • 出版年:   2014

▎ 摘  要

Defect engineering in graphene is important for tailoring graphene's properties thus applicable in various applications such as porous membranes and ultra-capacitors. In this paper, we report a general route towards defect-and pore-engineering in graphene through remote plasma treatments. Oxygen plasma irradiation was employed to create homogenous defects in graphene with controllable density from a few to approximate to 10(3) (mu m(-2)). The created defects can be further enlarged into nanopores by hydrogen plasma anisotropic etching with well-defined pore size of a few nm or above. The achieved smallest nanopores are approximate to 2 nm in size, showing the potential for ultra-small graphene nanopores fabrication.