• 文献标题:   Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process
  • 文献类型:   Article
  • 作  者:   KHAN SA, JEONG HS, RAHMAN SA, BAE JH, KIM WY
  • 作者关键词:   ferroelectric, graphene, memory, transfer proces
  • 出版物名称:   JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
  • ISSN:   1533-4880 EI 1533-4899
  • 通讯作者地址:   Jeju Natl Univ
  • 被引频次:   0
  • DOI:   10.1166/jnn.2019.16703
  • 出版年:   2019

▎ 摘  要

The mechanical flexibility of both ferroelectric polymer and graphene provides the possibility for the memory device based on ferroelectric polymer and grapheme to operate on flexible substrate. Here, a memory device was fabricated on flexible substrate through the continuous transfer process of the two units with the ferroelectric polymer and the graphene hybrid film as one unit, and characterized. In particular, characteristics were maintained even with repetitive bending. The transfer process demonstrated in this paper is useful for implementing a memory device on a large-area substrate by consuming a very small amount of graphene.