▎ 摘　　要

Recently, atomically thin film of graphene oxide sheets is the key point to solve the scaling problem of semiconductor technologies. One of the thin films applications is the formation of active layer in the Metal/Oxide/Metal devices such as memristor and non-volatile memory. The bipolar resistance switching on memristor is depended on the resistance variation by applied voltage which is switched between the high resistance and the low resistance in the Reset and Set voltages separately. In the graphene oxide-based memristor the conductive path is formed with redox of graphene oxide layer in the set process. In the other word, by applying the voltage, the graphene path due to conversion of sp(3) to sp(2) oxygen functionalities is created in the ON state. In the present work, the variation of the ON state resistance by the voltage and temperature in the degenerate, non-degenerate and general modes is explored. Also the activation energy in the three modes is determined by plotting the Arrhenius Plot. The activation energy for zero voltage is 8.66 mev, 8.66 mev, and 20.27 mev in general, degenerate, and non-degenerate limits respectively. These amounts with applying voltage in the range of (0 < v