• 文献标题:   Field Emission from Atomically Thin Edges of Reduced Graphene Oxide
  • 文献类型:   Article
  • 作  者:   YAMAGUCHI H, MURAKAMI K, EDA G, FUJITA T, GUAN PF, WANG WC, GONG C, BOISSE J, MILLER S, ACIK M, CHO KJ, CHABAL YJ, CHEN MW, WAKAYA F, TAKAI M, CHHOWALLA M
  • 作者关键词:   atomically thin edge, field electron emission, reduced graphene oxide, chemically derived graphene, low threshold field, field emission pattern, interference
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Rutgers State Univ
  • 被引频次:   109
  • DOI:   10.1021/nn201043a
  • 出版年:   2011

▎ 摘  要

Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1 V/mu m) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy measurement; show evidence for interference from emission sites that are separated by a few nanometers, suggesting that the emitted electron beams are coherent. On the basis of our high-resolution transmission electron microscopy, infrared spectroscopy, and simulation results, field emission from the rGO edge is attributed to a stable and unique aggregation of oxygen groups in the form of cyclic edge ethers. Such closely spaced electron beams from rGO offer prospects for novel applications and understanding the physics of linear electron sources.