▎ 摘　　要

A bolometer is a device that makes an electrical resistive response to the electromagnetic radiation resulted from a raise of temperature due to heating. The combination of the extremely weak electron-phonon interactions along with its small electron heat capacity makes graphene an ideal material for applications in ultra-fast and sensitive hot electron bolometer. However, a major issue is that the resistance of pristine graphene weakly depends on the electronic temperature. We propose using disordered graphene to obtain a strongly temperature dependent resistance. The measured electrical responsivity of the disordered graphene bolometer reaches 6 x 10(6) V/W at 1.5 K, corresponding to an optical responsivity of 1.6 x 10(5) V/W. The deduced electrical noise equivalent power is 1.2 fW/root Hz, corresponding to the optical noise equivalent power of 44 fW/root Hz. The minimal device structure and no requirement for high mobility graphene make a step forward towards the applications of graphene hot electron bolometers.