• 文献标题:   The mechanism of spontaneous doping of boron atoms into graphene
  • 文献类型:   Article
  • 作  者:   DENG XH, ZHANG DY, DENG MS, QU XL
  • 作者关键词:  
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:   Hengyang Normal Univ
  • 被引频次:   3
  • DOI:   10.1016/j.physe.2012.06.002
  • 出版年:   2012

▎ 摘  要

The mechanism of spontaneous doping of boron atoms into graphene is proposed from ab-initio calculations. When boron and oxygen atoms are placed beside the graphene plane, boron can substitute spontaneously carbon atom in graphene without any energy barrier. More interestingly, the mechanism of spontaneous boron doping is reversible, i.e., the boron dopant also can be removed by the similar barrier-free process. Therefore, the mechanism of doping and contra-doping in this paper should be very useful to control boron doping of graphene. (C) 2012 Elsevier B.V. All rights reserved.