• 文献标题:   Kinetic Monte Carlo simulations of vacancy evolution in graphene
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   PARISI L, DI GIUGNO R, DERETZIS I, ANGILELLA GGN, LA MAGNA A
  • 作者关键词:   graphene, vacancie, kinetic monte carlo
  • 出版物名称:   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • ISSN:   1369-8001 EI 1873-4081
  • 通讯作者地址:   Ist Microelettron Microsistemi CNR IMM
  • 被引频次:   4
  • DOI:   10.1016/j.mssp.2015.07.033
  • 出版年:   2016

▎ 摘  要

Kinetic lattice Monte Carlo simulations, implementing ab initio calibrated energetics, are applied to study the evolution of vacancy systems in graphene. The evolution of the under-coordinated atomic layer proceeds, in general, by island nucleation and growth. However, the first stage (nucleation) is strongly influenced by the stability of small aggregates (e.g. di-vacancies) and by the effective coalescence/attachment barriers. Quantitative predictions of the system kinetics in terms of crystal state and defects' morphology as a function of the initial state and the temperature can be obtained and readily compared with experimental structural characterization of processed samples. (C) 2015 Elsevier Ltd. All rights reserved.