• 文献标题:   Effect of out-of-plane directional intra-layer coupling from graphene monolayer on sp(3) type defect with gap-plasmonic structures
  • 文献类型:   Article
  • 作  者:   PARK WH
  • 作者关键词:   graphene, surfaceenhanced raman spectroscopy, outofplane phonon mode, intralayer coupling
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727 EI 1361-6463
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   2
  • DOI:   10.1088/0022-3727/49/37/37LT01
  • 出版年:   2016

▎ 摘  要

The author investigates an intra-layer coupling effect through transverse acoustic (TA) phonon modes along the z-direction at Au nanoparticle (NP)-graphene monolayer (GM)-Au thin film (TF) plasmonic junctions in regard with sp(3) type defect effect. The oxidation and resulting disorder of GM with breaking of six-fold symmetry have been explored. Because a Raman-forbidden D peak can be activated due to unwanted single-phonon inter-valley and intra-valley scattering processes, the quantitative estimation of the sp(3) type defect is being performed by the intensity ratio between G and D peaks. By exploring the difference of the maximum peak position (TA3-TA1) and the intensity ratio, (TA1/TA3) the author can reveal that a lower z-protruded GM accompanied with weak intra-coupling and a weaker RBLM intensity show relatively high D/G. It means that larger surface area of a GM to be functionalized by oxidization can secure more easily than the higher z-protruded. This investigation presents the importance of controlling the degree of z-protrusion of GM surface in terms of not only the presence of high D/G but also its related and detailed nano-structural surface shape, leading to the enhancement of electrical properties such as a carrier mobility and sheet resistance value. The out-of-plane phonon modes will be considered as a key factor in further exploring nanophysical deformation of 2D materials in sync with its electrical performance.