▎ 摘　　要

The assembly of reduced graphene oxide (rGO) and fullerene (C-60) into hybrid (rGO/C-60) wires was successfully performed by employing the liquid-liquid interfacial precipitation method. The rGO sheets spontaneously wrapped C-60 wires through the pi-pi interaction between rGO and C-60. Structural characterization of the rGO/C-60 wires was carried out by using UV/visible spectroscopy, scanning electron microscopy, and transmission electron microscopy. FET devices with rGO/C-60 wires were fabricated to investigate their electrical properties. The I-ds-V-g, curves of the hybrid wires exhibited p-type semiconducting behavior both in vacuum and in air, indicating hole transport through rGO as a shell layer, whereas pure C-60 wires and rGO sheets showed n-type and ambipolar behaviors, respectively, under vacuum. Possible application of the fabricated wires, such as photovoltaic devices, was also demonstrated.