▎ 摘　　要

We analyze the electrical modulation of the terahertz (THz) radiation associated with the carrier heating in the graphene-phosphorene (GP) heterostuctures. The heating of the carriers leads to the transfer of a significant fraction of the light carriers from the G-layer to the P-layer with a relatively large carrier effective mass. This might result in a dramatic decrease in the conductivity of the GP-channel that could be used to modulate the incident THz radiation. We demonstrate that the depth of the THz radiation modulation can be large in relatively wide range of the modulation frequencies.